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Preliminary DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0921A L & S BAND GaAs FET [ SMD non - matched ] FEATURES * High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm * High power gain Gp=17dB(TYP.) @f=1.9GHz * High power added efficiency hadd=40%(TYP.) @f=1.9GHz,Pin=17dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers Fig.1 QUALITY * GG RECOMMENDED BIAS CONDITIONS * Vds=10V * Ids=500mA * Rg=200W Delivery Tape & Reel (Ta=25C) Absolute maximum ratings Symbol VGSO Parameter Gate to sourcebreakdown voltage Ratings -15 -15 1800 -5.0 15 1 175 -65 to +175 Unit V V mA mA mA W C C VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Electrical characteristics Symbol IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=4.0mA VDS=3V,ID=500mA VDS=10V,ID=500mA,f=1.9GHz Pin=17dBm VDS=10V,ID=500mA,f=1.9GHz DVf Method --1.0 31 15 - Limits Typ. 1100 370 33 40 17 TBD 11 Max. 1800 -5.0 15 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric July 1999 MGF0921A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 40 80 70 Po Vds=10V VDS=6V Id(off)=500mA ID=0.1A 35 f=1.9GHz f=1.9GHz 30 25 Po(dBm) PAE 60 50 40 30 Gp 20 15 10 5 0 -5 0 5 10 Pin(dBm) 15 20 25 20 10 0 Pi(SCL) vs.Po(SCL),IM3 40 35 30 25 20 15 10 5 0 -5 -10 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 5 10 15 20 VD=10V ID=500mA f1=1.90GHz f2=1.91GHz Po IM3 -15 -10 -5 0 Pin(dBm) Mitsubishi Electric July 1999 IM3(dBc) Po(dBm) Gp(dB),PAE(%) MGF0921A freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 S PARAMETERS S11 Mag 0.912 0.905 0.899 0.894 0.891 0.887 0.884 0.882 0.879 0.877 0.876 0.874 0.873 0.870 0.869 0.868 0.866 0.865 0.863 0.862 0.861 0.859 0.859 0.857 0.855 0.853 0.851 0.848 0.846 0.844 0.840 0.837 0.833 0.830 Ang(deg) -106.34 -118.84 -131.17 -140.67 -147.97 -153.49 -157.81 -161.15 -163.89 -166.24 -168.30 -170.16 -172.02 -173.88 -175.65 -177.42 -179.09 179.23 177.64 176.15 174.76 173.45 172.04 170.52 168.59 166.23 163.00 160.79 158.12 155.31 152.24 149.12 145.94 142.70 (Ta=25C,VD=10V,ID=500mA, Reference Plane see Fig.1) S21 Mag 6.799 6.141 5.495 4.998 4.593 4.251 3.956 3.694 3.462 3.251 3.058 2.882 2.720 2.570 2.429 2.298 2.175 2.060 1.951 1.847 1.749 1.655 1.567 1.482 1.402 1.326 1.255 1.185 1.117 1.054 0.991 0.927 0.862 0.797 Ang(deg) 130.67 118.82 107.04 97.79 90.14 83.49 77.65 72.40 67.66 63.32 59.30 55.47 51.96 48.55 45.45 42.46 39.57 36.79 34.20 31.62 29.15 26.87 24.51 22.33 20.15 17.95 15.95 13.83 11.78 9.82 7.81 5.78 3.73 1.64 Mag 0.057 0.056 0.055 0.054 0.054 0.054 0.053 0.053 0.053 0.053 0.052 0.052 0.052 0.053 0.053 0.054 0.054 0.055 0.056 0.057 0.058 0.059 0.060 0.061 0.063 0.065 0.066 0.069 0.070 0.073 0.075 0.078 0.081 0.084 S12 Ang(deg) 37.37 35.62 33.94 32.39 30.84 29.49 28.05 26.80 25.56 24.42 23.40 22.47 21.56 20.75 19.95 19.36 18.77 18.19 17.80 17.42 17.15 16.87 16.81 16.73 16.65 16.75 16.85 17.03 17.28 17.52 17.81 18.08 18.33 18.54 Mag 0.326 0.352 0.379 0.404 0.429 0.453 0.478 0.500 0.522 0.542 0.562 0.581 0.598 0.616 0.631 0.646 0.660 0.673 0.684 0.695 0.706 0.714 0.723 0.730 0.735 0.740 0.745 0.748 0.749 0.751 0.751 0.752 0.752 0.752 S22 Ang(deg) -147.76 -147.87 -147.94 -148.04 -148.28 -148.55 -149.05 -149.56 -150.10 -150.84 -151.60 -152.45 -153.31 -154.26 -155.31 -156.35 -157.49 -158.71 -159.93 -161.23 -162.63 -164.02 -165.51 -167.08 -168.73 -170.38 -172.04 -173.87 -175.72 -177.65 -179.59 178.45 176.48 174.49 K 0.25 0.25 0.25 0.26 0.26 0.25 0.25 0.24 0.23 0.23 0.21 0.21 0.20 0.19 0.19 0.18 0.19 0.18 0.18 0.19 0.19 0.20 0.20 0.22 0.25 0.27 0.31 0.34 0.40 0.45 0.51 0.59 0.67 0.76 MSG/MAG (dB) 20.73 20.38 19.99 19.67 19.31 18.98 18.75 18.46 18.18 17.92 17.66 17.41 17.16 16.84 16.59 16.28 16.04 15.72 15.41 15.10 14.78 14.47 14.15 13.83 13.50 13.11 12.77 12.37 12.03 11.61 11.19 10.74 10.28 9.78 2.0 Gate Mark Round corner (1) 0.80 0.8 Gate Mark (1) Reference Plane 4.20 (3) 1.20 Reference Plane (2) 4.00 (2) 0.25 2.5 0.6 (1) Gate (2) Drain (3) Source 0.3 B A C K S ID E P A T T E RN (Unit:mm) Fig.1 OU T LINE DR A W ING Mitsubishi Electric July 1999 2.8 |
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